METHOD OF FABRICATING MOS TRANSISTOR HAVING SELF-ALIGNED SOURCE-DRAIN

摘要

The transistor including a polysilicon self-aligned source/ drain and double diffused drain using residual sidewall silicon oxide is formed by: (a) performing an active region and polysilicon gate on silicon substrate (45), followed by depositing silicon oxide (45,46) and silicon nitride (48); (b) depositing a PSG (45) with 500nm thickness on silicon substrate, the PSG thickness of gate part is half than that of other part; (c) removing the only PSG (49) layer of polysilicon gate (47) by reactive ion etching; (d) selective growing the polysilicon oxide (53) on gate part (55) after etching the PSG (50) on silicon substrate and silicon oxide (52) on polysilicon gate (47).