| 摘要 |
PURPOSE:To sharply lower reverse direction power loss by forming a one conductivity type semiconductor region of a first region having high resistance forming Schottky junction and a second region having lower resistance than this while forming plurality of semiconductor regions of a reverse conductive type thereto ranging over the first region and the second region. CONSTITUTION:A one conductivity type semiconductor region is formed of a first region 6 of high resistance forming Schottky junction and a second region 9 of lower resistance than this while forming one conductivity type semiconductor regions 7 to the first and second regions ranging over the first and second regions. Further, the semiconductor regions (buried regions) 7 are set up in the positions (d) to be reached by a space charged region spreading from the Schottky junction face to be formed of a Schottky barrier metal 1 and the first region 6 at the time of impressing reverse voltage, and the respective semiconductor regions 7 are thick (g) and arranged apart by distances (a, b) where respective space charged regions are mutually connected. In this connection, the distances (a), (b) are desirably set not to exceed two times the extent of the space charged layer of the PN junction. |
