| 摘要 |
A method of cleaning the process tube of the CVD apparatus comprising carrying silicon wafers out of the process tube, making temperature in the process tube lower enough than the process temperature, that is, equal to or higher than room temperature, and supplying cleaning gas, in which ClF3 is contained, into the process tube to react with poly-silicon and amorphous silicon (Si) stuck to that portion of the inner wall of the process tube which is not in the uniformly-heated zone in the process tube, whereby the matters stuck can be removed from the inner wall of the process tube for a shorter time.
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