| 摘要 |
PURPOSE:To accurately form a resist pattern for forming a connecting hole in a layer insulating film in a multilayer interconnection forming method. CONSTITUTION:After forming a wiring layer 18 made of aluminum or an aluminum alloy on an insulating film 16 covering the upper surface of a semiconductor substrate 10, the wiring layer 18 is covered and a layer insulating film 20 such as silicon oxide is formed, and then a reflection preventive film of TiN, etc., is formed on the surface of the insulating film 20. After forming a resist layer on the reflection prevented film, an opening corresponding to a desired connection hole is formed by applying an exposure and developing treatment to this resist layer. And a connecting hole 28 is formed by selectively the insulating film 20 with the resist layer having the opening as mask. After removing the resist layer, a wiring layer 30 is formed on the upper surface of the substrate, but a remaining portion 22A of the reflection preventive film may be used as part of the wiring layer 30. |
