| 摘要 |
PURPOSE:To improve the light absorbing efficiency of a non-exitaion region and reduce the total length of an element, by forming a region doped with impurity ions by thermal diffusion, in a non-exitation region in the rear of an exitation region in an active layer. CONSTITUTION:The part 13 of the an end face light emitting diode of 1.3nm wavelength is formed as a region doped with Zn as impurities by thermal diffusion. The diffusion reaches an active layer 4, and is preferable to reach a P-InP clad layer 3 thereunder. Various kinds of impurities like Cd can be used as impurities which are not restricted to Zn. By doping the active layer 4 in the rear of a light emitting region with impurity ions by thermal diffusion, the light absorbing efficiency of a light absorbing region can be increased, so that laser oscillation can be supressed even when the length of the light absorbing layer is reduced. Hence the size of an element can be reduced. |
