METHOD FOR MATING CRYSTAL AZIMUTH OF INGOT

摘要

PROBLEM TO BE SOLVED: To provide a method for mating the crystal azimuth of a semiconductor ingot which can arrange the crystal azimuth of a cut surface to be a prescribed crystal azimuth correctly when a semiconductor wafer is cut. SOLUTION: The rotational adjustment quantity of a semiconductor ingot 1 is calculated in order to arrange the slope line azimuth of a crystal surface after rotational adjustment to be an aimed azimuth ha. After the displacement angle f1 of the azimuth of the notch 2 of a cut surface generated in the rotational adjustment of the semiconductor ingot 1 being calculated on the basis of the calculated rotational adjustment quantity, the rotational adjustment quantity of the semiconductor ingot 1 is calculated in order to arrange the slope line azimuth after the rotational adjustment to be the azimuth with the displacement angle f1 calculated from the aimed slope line azimuth ha corrected. An operation for calculating the displacement angle f1 of the azimuth of the notch 2 generated in the rotational adjustment corresponding to the calculated rotational adjustment quantity is repeated until the difference between the calculated displacement angle f1 and a previously calculated displacement angle f1 becomes smaller than an allowable error.