SEMICONDUCTOR DEVICE FOR REDUCING CHARGE IMPACT GENERATED BY PLASMA ETCHING PROCESS AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a semiconductor device for reducing a charge impact generated by a plasma etching process is provided to improve a loading effect and to reduce a Fowler-Nordheim tunneling current or direct tunneling current generated in a main gate, by forming a sub gate on both sides of the main gate to have charges penetrate an insulating layer in a plasma etching process. CONSTITUTION: A main gate pattern is formed on a semiconductor substrate by a plasma etching method. A sub gate pattern is formed on both sides of the main gate pattern so that the quantity of charges generated by plasma in an etch process passing through an insulating layer of the main gate pattern is reduced.