| 摘要 |
<p>A semi-conductor light emitting diode comprises closely spaced n and p electrodes formed on the same side of a substrate (100) to form an LED with a small footprint. A semi-transparent U shaped p contact layer (102) is formed along three sides of the top surface of the underlying window layer (101). The p electrode (103) is formed on the p contact layer centered on the closed end of the U shape. An n contact layer (105) is formed on an n cladding layer (203) and centered in the open end of the U shape of the p contact layer (102). The n electrode (106) is formed on the n contact layer (105). The n and p electrodes are electrically isolated from one another by either a notch (107) or an insulator situated between the electrodes.</p> |
