| 摘要 |
<p>The invention relates to a device for the plasma-mediated working of surfaces on planar substrates, whereby the plasma can be obtained by low-pressure gas discharges in the HF/VHF range. A modification of the surfaces, for example so-called dry-etching, can be achieved with said working and also the formation of thin layers on the substrate surfaces. The aim of the invention is to provide an economical device, whereby substrate surfaces of relatively large format may be worked at elevated frequency, preferably in the frequency range above 30MHz. Said aim is achieved, whereby a planar electrode is arranged in a chamber and electrically connected to a high frequency generator. Within the chamber at least one mass tunnel of electrically conducting material is provided. A discharge chamber is formed in said mass tunnel, enclosed with up to two opposing slots. A simple substrate or a substrate with a substrate support may be introduced and withdrawn in a translatory manner through said slots. A process gas feed and process gas exhaust are further connected to the discharge chamber, such that a process-specific pressure differential can be fixed relative to the chamber volume of the vacuum chamber, due to the slots being partly closed by the substrate or the substrate support during working.</p> |
