| 摘要 |
<p>A mask pattern (40) having a shade portion (41) composed of a shade film such as a chromium film and phase shifters (42, 43) is formed on a transparent substrate (30). The phase shifter (42 or 43) causes a phase difference of 180 degrees of the exposure light between the phase shifter (42 or 43) and the transparent substrate (30). A first light intensity generated by exposure light passing through the phase shifter (42 or 43) in a shade image formation region corresponding to the mask pattern (40) on the material to be exposed is not greater than four times of a second light intensity generated in the shade image formation region by the exposure light coming onto the rear side of the mask pattern (40) passing through a peripheral portion of the mask pattern (40) in the transparent substrate (30).</p> |
