发明名称 SEMICONDUCTOR THIN FILM, PHOTOELECTRIC CONVERTER EMPLOYING IT, AND PHOTOVOLTAIC GENERATOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To realize a high quality amorphous Si semiconductor film exhibiting excellent photostability, and to provide a high efficiency low photodegradation rate photoelectric converter employing it, and a photovoltaic generator device. <P>SOLUTION: The semiconductor thin film contains at least silicon and hydrogen and has the ratio of scattering peak intensity in TA mode to scattering peak intensity in TO mode obtained by Raman scattering spectrum not larger than 0.35 wherein crystal grains having maximum grain size in the range of 1-6 nm are scattered. Consequently, SRO is improved significantly and a high quality high photostability semiconductor thin film is obtained. A high efficiency low photodegradation rate photoelectric converter can also be provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004363578(A) 申请公布日期 2004.12.24
申请号 JP20040144077 申请日期 2004.05.13
申请人 KYOCERA CORP 发明人 SHINRAKU KOUICHIROU;KOMOTA MANABU;SHIROMA HIDEKI;NISHIMURA KOTA
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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