发明名称 SURFACE MOUNTING GUNN DIODE AND ITS MOUNTING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a surface mounting Gunn diode which can be mounted by soldering at a low mounting cost while suppressing variation in characteristics. <P>SOLUTION: The surface mounting Gunn diode comprises a first semiconductor layer, an active layer and a second semiconductor layer formed sequentially on a semiconductor substrate with the internal region of the second semiconductor layer excepting the circumference being separated as a plurality of mesa structures by an insulator region reaching at least the active layer, a first electrode on the second semiconductor layer of the plurality of mesa structures, a second electrode on the circumferential second semiconductor layer, and conductive bump electrodes provided on the first and second electrodes. The insulator region has a continuous structure including the plurality of mesa structures entirely on the inside and the first electrode is constituted of a single continuous electrode included on the inside of the insulator region and connected by a metal film on the insulator region. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004363483(A) 申请公布日期 2004.12.24
申请号 JP20030162479 申请日期 2003.06.06
申请人 NEW JAPAN RADIO CO LTD 发明人 WATANABE KENICHI;YOSHIDA TAKASHI
分类号 H01L21/28;H01L23/12;H01L29/41;H01L47/02;H03B9/12;(IPC1-7):H01L47/02 主分类号 H01L21/28
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