| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer for a semiconductor light emitting element which has very high manufacturing yield, a high luminance and a low cost, by eliminating the lifting phenomenon of an ITO film in the manufacture of a current contriction type light emitting diode using the ITO film for a transparent conductive film (current diffusion layer) and having a current block layer made of a photoresist. <P>SOLUTION: The method of manufacturing the epitaxial wafer for the semiconductor light emitting element sequentially forms a light emitting unit in which at least an active layer 5 is sandwiched between an n-type clad layer 4 and a p-type clad layer 6, an ohmic contact layer 7 containing conductivity type determining impurities in a high concentration, the current block layer 11 made of a resist film, and the transparent conductive film 8 made of the ITO film on a substrate 1. In the method, before the transparent conductive film 8 is formed, the current block layer 11 is heat treated, and swelling is stopped. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
