Memory device including electrical circuit configured to provide reversible bias across the PMC memory cell to perform erase and write functions

摘要

Methods and apparatuses for programming a programmable metallization cell (PMC) memory cell are provided. A memory device includes a programmable metallization memory cell, a plate line connected to a first node of the memory cell, and a bitline connected to a second node of the memory cell. The memory device also includes circuitry configured to perform a write operation by applying a first voltage to the plate line and a second voltage to the bitline, perform an erase operation by applying the second voltage to the plate line and the first voltage to the bitline, and apply a voltage midway between the first voltage and the second voltage to the plate line when the write operation and the erase operation are not being performed.