| 摘要 |
<P>PROBLEM TO BE SOLVED: To inexpensively and stably produce a high-quality bulk AlN single crystal used as a substrate by an LPE (Liquid Phase Epitaxy) method of a temperature gradient system. <P>SOLUTION: In the method for producing the AlN single crystal, comprising heating and melting a melt raw material containing Al to obtain a melt, then forming an AlN solution by dissolving nitrogen into the melt, and growing the AlN single crystal on a seed crystal substrate for growing the AlN single crystal by bringing the seed crystal substrate into contact with the surface layer of the melt, the atmosphere is set to be an inert gas (e.g. argon gas) atmosphere until the element having highest molar ratio in the melt raw material is completely melted when the melt raw material is heated and melted, and thereafter, the atmosphere is replaced with a nitrogen-containing gas atmosphere and the AlN single crystal is grown on the seed crystal substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT |
