发明名称 Wafer recovering method, wafer, and fabrication method
摘要 In order to use an etching solution of less complicated composition for recovering used wafers, embodiments of the present invention provide a recovering method, and also provide a kind of wafer, which is used as a process control wafer or dummy wafer, and fabrication methods. In one embodiment, a wafer-recovering method comprises providing a first wafer, wherein the first wafer has a base, a first conductive layer on the base, and a second conductive layer on the first conductive layer. The method further comprises removing the first and second conductive layers with an acidic solution to obtain a second wafer; and washing the second wafer with a liquid. The second conductive layer is formed on the first conductive layer in a deposition process, and the first conductive layer is more easily removed by the acidic solution than the second conductive layer.
申请公布号 US7344998(B2) 申请公布日期 2008.03.18
申请号 US20040943081 申请日期 2004.09.15
申请人 MOSEL VITELIC, INC. 发明人 LIN CHUN-TE;CHEN TA-TE
分类号 H01L21/302;B44C1/22;C23F1/00;C23F1/20;C23F1/26;H01L21/00;H01L21/3213;H01L21/461 主分类号 H01L21/302
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