| 摘要 |
The semiconductor light emitting device and manufacturing method thereof are provided to form the semiconductor layer having high crystalline in the lower part of the light emitting structure, and to improve the internal quantum efficiency. The semiconductor light emitting device comprises the semiconductor layer(120) whose surface is formed with concavo-convex; the reflector layer(130) of the uneven shape formed on the semiconductor layer; the light emitting structure formed on the reflector layer of the uneven shape; the mask pattern(112). The mask pattern is one selected among SiO2, SiOx, SiN2, SiNx, SiOxNy or the metal material.
|
