| 摘要 |
<p>The semiconductor memory device for reducing the effect of coupling capacitance in bit line interaction comprises; a large number of bit lines and word lines, an upper sense amplifier connected with a pair of bit lines of odd number, a lower sense amplifier connected with a pair of bit lines of even number, a several cells arranged at intersection of word lines and bit lines, and a first sense amp activating means connected with the upper sense amplifier to activate the upper sense amplifier. The word line of memory cells connecting with the bit line of odd number is not connected with the bit line of even number.</p> |
