发明名称 Light-emitting element, light-emitting device, and electronic device
摘要 A light-emitting element having high emission efficiency and long lifetime is provided. By manufacturing a light-emitting device using the light-emitting element, the light-emitting device having low power consumption and long lifetime is provided. The light-emitting element is manufactured in which a light-emitting layer is included between a first electrode serving as an anode and a second electrode serving as a cathode. The light-emitting layer includes a first organic compound having a hole-transporting property, a second organic compound having an electron-transporting property, and an organometallic complex including a dibenzo[f,h]quinoxaline skeleton as a ligand. Further, a light-emitting device is manufactured using the light-emitting element.
申请公布号 US9391283(B2) 申请公布日期 2016.07.12
申请号 US201313908718 申请日期 2013.06.03
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Ohsawa Nobuharu;Inoue Hideko;Seo Satoshi
分类号 H01L51/00;C09K11/06;H01L51/50 主分类号 H01L51/00
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A light-emitting element comprising a light-emitting layer between a first electrode and a second electrode, wherein the light-emitting layer comprises a first organic compound having a hole-transporting property, a second organic compound having an electron-transporting property, and an organometallic complex, wherein the organometallic complex comprises a first ligand having a dibenzo[f,h]quinoxaline skeleton, wherein the organometallic complex comprises a monoanionic ligand, wherein a central metal of the organometallic complex is a Group 9 or Group 10 element, and wherein the first ligand of the organometallic complex is a 2-aryldibenzo[f,h]quinoxaline derivative.
地址 Kanagawa-ken JP