发明名称 |
Reduced resistance short-channel InGaAs planar MOSFET |
摘要 |
A metal-oxide-semiconductor field effect transistor (MOSFET) and a method of fabricating a MOSFET are described. The method includes depositing and patterning a dummy gate stack above an active channel layer formed on a base. The method also includes selectively etching the active channel layer leaving a remaining active channel layer, and epitaxially growing silicon doped active channel material adjacent to the remaining active channel layer. |
申请公布号 |
US9412865(B1) |
申请公布日期 |
2016.08.09 |
申请号 |
US201615090868 |
申请日期 |
2016.04.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Kerber Pranita;Ouyang Qiqing C.;Reznicek Alexander |
分类号 |
H01L21/365;H01L29/78;H01L29/06;H01L29/201;H01L29/207;H01L29/66 |
主分类号 |
H01L21/365 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP |
主权项 |
1. A method of fabricating a metal-oxide-semiconductor field effect transistor (MOSFET), the method comprising:
forming a base by depositing a buried insulator layer on a substrate; forming an active channel layer on the base, the active channel layer comprising Indium Gallium Arsenide (InGaAs); depositing and patterning a dummy gate stack above a portion of the active channel layer formed on the base, the dummy gate stack including a dielectric or amorphous silicon layer; selectively etching the active channel layer leaving a remaining active channel layer, the selectively etching including undercutting to etch some of the active channel layer between the dummy gate stack and the base; performing a p-type ion implantation in the buried insulator after the selectively etching the active channel layer; epitaxially growing silicon doped active channel material on the base adjacent to the remaining active channel layer after the performing the p-type ion implantation, the epitaxially growing the silicon doped active channel material being based on metal-organic chemical vapor deposition (MOCVD) and the epitaxially growing the silicon doped active channel material including growing the silicon doped active channel material to a thickness greater than a thickness of the remaining active channel layer. |
地址 |
Armonk NY US |