发明名称 |
Semiconductor structure |
摘要 |
A semiconductor structure comprises a substrate, an epitaxial layer, an active area and a termination. The substrate has a first conducting type of semiconductor material. The epitaxial layer disposed on the substrate has a first conducting type of semiconductor material. The active area is a working area of the semiconductor structure. The termination protects the active area. The termination has a junction termination extension (JTE) having a second conducting type of semiconductor material. The counter-doped area is disposed in the JTE area and has the first conducting type of semiconductor material. A dose of the first conducting type of semiconductor material in the counter-doped area increases along one direction. |
申请公布号 |
US9412807(B1) |
申请公布日期 |
2016.08.09 |
申请号 |
US201514872791 |
申请日期 |
2015.10.01 |
申请人 |
NATIONAL TSING HUA UNIVERSITY |
发明人 |
Huang Chih-Fang;Chang Ting-Fu;Hsu Hua-Chih;Jiang Jheng-Yi |
分类号 |
H01L23/58;H01L29/06 |
主分类号 |
H01L23/58 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. A semiconductor structure, comprising:
a substrate having a first conducting type of semiconductor material; an epitaxial layer, which is disposed on the substrate and has the first conducting type of semiconductor material; an active area being a working area of the semiconductor structure; and a termination for protecting the active area, the termination comprising:
a first junction termination extension (JTE) area, which is disposed in the epitaxial layer and has a second conducting type of semiconductor material;a second JTE area, which is disposed in the epitaxial layer and contacts the first JTE area, wherein the second JTE area has the second conducting type of semiconductor material; andat least a first counter-doped area, which has the first conducting type of semiconductor material and is disposed in the second JTE area; wherein the first conducting type of semiconductor material and the second conducting type of semiconductor material have different conducting types. |
地址 |
Hsinchu TW |