发明名称 Semiconductor structure
摘要 A semiconductor structure comprises a substrate, an epitaxial layer, an active area and a termination. The substrate has a first conducting type of semiconductor material. The epitaxial layer disposed on the substrate has a first conducting type of semiconductor material. The active area is a working area of the semiconductor structure. The termination protects the active area. The termination has a junction termination extension (JTE) having a second conducting type of semiconductor material. The counter-doped area is disposed in the JTE area and has the first conducting type of semiconductor material. A dose of the first conducting type of semiconductor material in the counter-doped area increases along one direction.
申请公布号 US9412807(B1) 申请公布日期 2016.08.09
申请号 US201514872791 申请日期 2015.10.01
申请人 NATIONAL TSING HUA UNIVERSITY 发明人 Huang Chih-Fang;Chang Ting-Fu;Hsu Hua-Chih;Jiang Jheng-Yi
分类号 H01L23/58;H01L29/06 主分类号 H01L23/58
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A semiconductor structure, comprising: a substrate having a first conducting type of semiconductor material; an epitaxial layer, which is disposed on the substrate and has the first conducting type of semiconductor material; an active area being a working area of the semiconductor structure; and a termination for protecting the active area, the termination comprising: a first junction termination extension (JTE) area, which is disposed in the epitaxial layer and has a second conducting type of semiconductor material;a second JTE area, which is disposed in the epitaxial layer and contacts the first JTE area, wherein the second JTE area has the second conducting type of semiconductor material; andat least a first counter-doped area, which has the first conducting type of semiconductor material and is disposed in the second JTE area; wherein the first conducting type of semiconductor material and the second conducting type of semiconductor material have different conducting types.
地址 Hsinchu TW