III-V CMOS integration on silicon substrate via embedded germanium-containing layer

摘要

After forming a first trench and a second trench extending through a top elemental semiconductor layer present on a substrate including, from bottom to top, a handle substrate, a compound semiconductor template layer and a buried insulator layer to define a top elemental semiconductor layer portion for a p-type metal-oxide-semiconductor transistor, the second trench is vertically expanded through the buried insulator layer to provide an expanded second trench that exposes a top surface of the compound semiconductor template layer at a bottom of the expanded second trench. A stack of a compound semiconductor buffer layer and a top compound semiconductor layer is epitaxially grown on the compound semiconductor template layer within the expanded second trench for an n-type metal-oxide-semiconductor transistor.

主权项

1. A semiconductor structure comprising
a substrate comprising a handle substrate, a compound semiconductor template layer present on the handle substrate, and a buried insulator layer present on the compound semiconductor template layer; a top elemental semiconductor layer portion present on a first portion of the substrate and in contact with a top surface of the buried insulator layer; and a stack of compound semiconductor layers present on a second portion of the substrate and comprising a compound semiconductor buffer layer in contact with a top surface of the compound semiconductor template layer and a top compound semiconductor layer present on the compound semiconductor buffer layer, wherein a lower portion of the stack is laterally surrounded by the buried insulator layer, and wherein an upper portion of the top compound semiconductor layer protrudes above a horizontal plane including a top surface of the top elemental semiconductor layer portion.