Methods of forming V0 structures for semiconductor devices that includes recessing a contact structure

摘要

One illustrative method disclosed herein includes, among other things, forming a source/drain contact structure between two spaced-apart transistor gate structures, recessing the source/drain contact structure to define a source/drain contact etch cavity and depositing a conformal second layer of insulating material above a first layer of insulating material and in the source/drain contact etch cavity. The method also includes forming a third layer of insulating material above the conformal second layer of insulating material, forming an opening in the conformal second layer of insulating material and forming a V0 via that is conductively coupled to the exposed portion of the recessed source/drain contact structure.

主权项

1. A method of forming a via on an integrated circuit product comprised of two spaced-apart transistor gate structures, each of said gate structures having a gate cap layer with an upper surface, the method comprising:
forming a source/drain contact structure between said two spaced-apart transistor gate structures, wherein an upper surface of said source/drain contact structure is positioned at a first level that is above a level of said upper surfaces of said gate cap layers; recessing said source/drain contact structure to define a recessed source/drain contact having a recessed upper surface that is positioned at a second level that is lower than said first level, wherein said recessing of said source/drain contact structure defines a source/drain contact etch cavity that is defined, at least in part, by said recessed upper surface of said recessed source/drain contact and a first layer of insulating material; performing a conformal deposition process to deposit a conformal second layer of insulating material above said first layer of insulating material, in said source/drain contact etch cavity and on said recessed upper surface of said recessed source/drain contact; forming a third layer of insulating material above said conformal second layer of insulating material; performing at least one etching process to form an opening in said conformal second layer of insulating material so as to expose at least a portion of said recessed upper surface of said recessed source/drain contact; and forming said via such that it is conductively coupled to said exposed portion of said recessed source/drain contact structure, said via being at least partially positioned in said opening in said conformal second layer of insulating material.