Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress

摘要

A method of reducing a migration of oxygen into a high-k dielectric layer of a semiconducting device is disclosed. An oxide layer of the semiconducting device is deposited on a substrate. A chemical composition of a top portion of the oxide layer is altered. The high-k dielectric layer is deposited on the top portion of the oxide layer to form the semiconducting device. The altered chemical composition of the top portion of the oxide layer reduces migration of oxygen into the high-k dielectric layer.

主权项

1. A method of reducing a migration of oxygen into a high-k dielectric layer of a semiconducting device, comprising:
forming a first dummy gate and a second dummy gate to define a first gap; depositing an oxide layer of the semiconducting device on a substrate in the first gap; altering a chemical composition of a top portion of the oxide layer; removing the first dummy gate and the second dummy gate to define a second gap; depositing the high-k dielectric layer on the top portion of the oxide layer and in the second gap, wherein the altered chemical composition of the top portion of the oxide layer reduces migration of oxygen into the high-k dielectric layer; annealing the semiconducting device, wherein the top portion of the oxide layer prevents migration of oxygen from the oxide layer into the high-k dielectric layer during the annealing; and removing a first segment of the high-k dielectric layer from the top portion of the oxide layer after the annealing of the semi-conducting device to dissociate the high-k dielectric layer from the oxide layer, wherein a second segment of the high-k dielectric layer lines the second gap to define a gate lining.