发明名称 RESONANT TYPE HIGH FREQUENCY POWER SUPPLY DEVICE AND SWITCHING CIRCUIT FOR RESONANT TYPE HIGH FREQUENCY POWER SUPPLY DEVICE
摘要 A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation, the resonant type high frequency power supply device including a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to the power semiconductor element to drive the above-mentioned power semiconductor element, a variable pulse signal generating circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to the high frequency pulse drive circuit to drive the above-mentioned high frequency pulse drive circuit, and a bias power supply circuit that supplies driving power to both the variable pulse signal generating circuit and the high frequency pulse drive circuit.
申请公布号 US2016248277(A1) 申请公布日期 2016.08.25
申请号 US201315027634 申请日期 2013.10.31
申请人 MITSUBISHI ELECTRIC ENGINEERING COMPANY, LIMITED 发明人 AKUZAWA Yoshiyuki;SAKAI Kiyohide;EZOE Toshihiro;ITO Yuki
分类号 H02J50/12;H02J50/20 主分类号 H02J50/12
代理机构 代理人
主权项 1. A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation, said resonant type high frequency power supply device comprising: a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to said power semiconductor element to drive said power semiconductor element; a variable pulse signal generating circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to said high frequency pulse drive circuit to drive said high frequency pulse drive circuit; and a bias power supply circuit that supplies driving power to both said variable pulse signal generating circuit and said high frequency pulse drive circuit.
地址 Chiyoda-ku, Tokyo JP