发明名称 |
RESONANT TYPE HIGH FREQUENCY POWER SUPPLY DEVICE AND SWITCHING CIRCUIT FOR RESONANT TYPE HIGH FREQUENCY POWER SUPPLY DEVICE |
摘要 |
A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation, the resonant type high frequency power supply device including a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to the power semiconductor element to drive the above-mentioned power semiconductor element, a variable pulse signal generating circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to the high frequency pulse drive circuit to drive the above-mentioned high frequency pulse drive circuit, and a bias power supply circuit that supplies driving power to both the variable pulse signal generating circuit and the high frequency pulse drive circuit. |
申请公布号 |
US2016248277(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201315027634 |
申请日期 |
2013.10.31 |
申请人 |
MITSUBISHI ELECTRIC ENGINEERING COMPANY, LIMITED |
发明人 |
AKUZAWA Yoshiyuki;SAKAI Kiyohide;EZOE Toshihiro;ITO Yuki |
分类号 |
H02J50/12;H02J50/20 |
主分类号 |
H02J50/12 |
代理机构 |
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代理人 |
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主权项 |
1. A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation, said resonant type high frequency power supply device comprising:
a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to said power semiconductor element to drive said power semiconductor element; a variable pulse signal generating circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to said high frequency pulse drive circuit to drive said high frequency pulse drive circuit; and a bias power supply circuit that supplies driving power to both said variable pulse signal generating circuit and said high frequency pulse drive circuit. |
地址 |
Chiyoda-ku, Tokyo JP |