发明名称 PATTERN FORMING METHOD AND PHOTOSENSITIVE RESIN COMPOSITION
摘要 PURPOSE:To simplify a process for forming a resist pattern by irradiating a film made of the composition containing a specified polymer with light and heating it after development. CONSTITUTION:This photosensitive resin composition contains the polymer (A) having structural units represented by the formula; -(RMO1.5)- in which R is an organic group, and M is a metal atom. The film made of this composi tion is formed on a substrate, prebaked, imagewise exposed, developed, and then, heated together with the substrate to decompose a part of the organic materials or all of them in the composition and to form a pattern made of metal oxides or the like. The polymer A can be embodied by a polymer obtained by introducing acetyl chloride into polymethylsilsesquioxane, and the like and the film of the composition can be formed by using a solution containing the polymer and a photosensitive agent, such as o- naphthoquinonediazide.
申请公布号 JPH03260653(A) 申请公布日期 1991.11.20
申请号 JP19900057983 申请日期 1990.03.12
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KIMURA TAKAO;ONOSE KATSUHIDE
分类号 G03F7/022;G03F7/075;G03F7/40 主分类号 G03F7/022
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