| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
According to one embodiment, a semiconductor device includes: a first switching element comprising a heterojunction comprising a first compound semiconductor layer and a second compound semiconductor layer; and a driver which applies a voltage to a gate of the first switching element to control turn-on and turn-off of the first switching element. The driver temporarily increases a gate voltage of the first switching element at a timing when the first switching element is turned on, during a period while the first switching element is on. |
| 申请公布号 |
US2016269024(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201514839216 |
申请日期 |
2015.08.28 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Naka Toshiyuki |
| 分类号 |
H03K17/687;H01L29/205;H01L29/778;H01L29/20 |
主分类号 |
H03K17/687 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first switching element comprising a heterojunction comprising a first compound semiconductor layer and a second compound semiconductor layer; and a driver which applies a voltage to a gate of the first switching element to control turn-on and turn-off of the first switching element, wherein the driver temporarily increases a gate voltage of the first switching element at a timing when the first switching element is turned on, during a period while the first switching element is on. |
| 地址 |
Tokyo JP |
