Solid-state image sensor and imaging device

摘要

A ranging pixel located in a peripheral region of a solid-state image sensor includes a microlens having a center axis that is shifted relative to a center axis of the ranging pixel, a first photoelectric conversion unit, and a second photoelectric conversion unit. The first photoelectric conversion unit is disposed on a side of the center axis of the ranging pixel that is in a direction opposite to a direction (projection shift direction) obtained by projecting a shift direction of the microlens onto a straight line connecting a center of the first photoelectric conversion unit and a center of the second photoelectric conversion unit, and the second photoelectric conversion unit is disposed on another side of the center axis of the ranging pixel that is in a direction identical to the projection shift direction of the microlens. In addition, the area of the first photoelectric conversion unit is greater than the area of the second photoelectric conversion unit.

主权项

1. A solid-state image sensor comprising one or more ranging pixels, the one or more ranging pixels each including a microlens, a plurality of photoelectric conversion units, and a plurality of waveguides disposed between the microlens and the plurality of photoelectric conversion units so as to correspond to the plurality of photoelectric conversion units,
wherein, in at least one ranging pixel located in a peripheral region of the solid-state image sensor, the microlens is so disposed that a center axis thereof is shifted relative to a center axis of the ranging pixel, the plurality of photoelectric conversion units include a first photoelectric conversion unit and a second photoelectric conversion unit, the first photoelectric conversion unit is disposed on a side of the center axis of the ranging pixel that is in a direction opposite to a direction obtained by projecting a shift direction of the microlens onto a straight line connecting a center of the first photoelectric conversion unit and a center of the second photoelectric conversion unit, the second photoelectric conversion unit is disposed on another side of the center axis of the ranging pixel that is in a direction identical to the direction obtained by projecting the shift direction of the microlens onto the straight line, and an area of the first photoelectric conversion unit on a light-incident side of the ranging pixel is greater than an area of the second photoelectric conversion unit on the light-incident side.