Thin film transistor panel having an etch stopper on semiconductor

摘要

A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

主权项

1. A panel comprising a thin film transistor, the panel comprising:
a substrate; a first electrode on the substrate; a first insulating layer on the first electrode; an oxide semiconductor pattern on the first insulating layer; an etch stopper on the oxide semiconductor pattern; a second electrode and a third electrode on the etch stopper and the oxide semiconductor pattern, wherein:
lateralmost sidewalls of the etch stopper are substantially aligned with lateralmost sidewalls of the oxide semiconductor pattern; anda work function of the second electrode and the third electrode is lower than a work function of the oxide semiconductor pattern.