Vertical fin eDRAM

摘要

Systems and methods of forming semiconductor devices. A trench capacitor comprising deep trenches is formed in an n+ type substrate. The deep trenches have a lower portion partially filled with a trench conductor surrounded by a storage dielectric. A polysilicon growth is formed in an upper portion of the deep trenches. The semiconductor device includes a single-crystal semiconductor having an angled seam separating a portion of the polysilicon growth from an exposed edge of the deep trenches. A word-line is wrapped around the single-crystal semiconductor. A bit-line overlays the single-crystal semiconductor.

主权项

1. A semiconductor device comprising:
a trench capacitor comprising deep trenches formed in a n+ type substrate, said deep trenches having a lower portion partially filled with a trench conductor surrounded by a storage dielectric; a polysilicon growth formed in an upper portion of said deep trenches; a single-crystal semiconductor having a seam separating a portion of said polysilicon growth from an exposed edge of said deep trenches, said seam being at an acute angle from said exposed edge; a word-line wrapped around said single-crystal semiconductor; and a bit-line overlaying said single-crystal semiconductor.