| 摘要 |
PURPOSE:To easily form a contact part even when the interval between gate electrodes is small, by forming a first conducting layer, via a second insulating film, on the side wall part and the upper part of the gate electrode and forming at least the end portion of a second conducting layer, via a third insulating film, on the first conducting layer. CONSTITUTION:Gate electrodes 3a, 3b, 3c are formed, via a first insulating film 14, on element isolation regions 2a, 2b and between impurity regions 5a, 7a and impurity regions 5b, 7b on a semiconductor substrate 1. A first conducting layer 8c is connected with the one side impurity regions 5a, 7a of a second conductivity type formed between the element isolation regions 2a, 2b on a semiconductor substrate 1 of a first conductivity type, and formed, via second insulating films 6a, 6b, 4a, 4b, on the side wall part and the upper part of the gate electrodes 3a, 3b. A second conduction layer 11 is connected with the other side impurity regions 5a, 7b, and the end portion of the layer 11 is formed on the first conducting layer 8c, via third insulating films 9, 10b. A second wiring layer 13b is connected with the second conducting layer 11. |
