| 摘要 |
PURPOSE:To form a submicron pattern by a method wherein a chemically sensitized resist whose film has been formed on a semiconductor substrate is exposed selectively to light, the rear of the substrate is brought into close contact with and fixed to a flat electrode, the face of the resist film on the substrate is brought into contact with another electrode, this assembly is heated while a voltage is being applied across both electrodes and a develop ing operation is executed. CONSTITUTION:A chemically sensitized resist 1 whose film has been formed on a semiconductor substrate 2 is exposed selectively to light; the rear of the substrate 2 is brought into close contact with and fixed to a flat electrode 3; and the face of the resist film on the substrate 2 is brought into contact with another electrode 6. This assembly is heated while a voltage is being applied across both electrodes 3, 6; and after that, a developing operation is executed. For example, an Si wafer 2 is coated with a chemically sensitized resist 1 in a thickness of 1mum; it is exposed to an excimer laser whose oscillation wavelength is 249nm; after that, the Si wafer is fitted to a metal electrode 3; and the resist face is brought into contact with mercury 6 in a mercury reservoir 7. A power supply 4 is adjusted so as to apply a voltage of 1V at 50Hz to the resist 1; and at this stage, a heater 5 is turned on. The wafer 2 is heated at 120 deg.C for five minutes. After that, it is developed by using an alkaline developer. |
