| 摘要 |
1,023,788. Semi-conductor devices. SIEMENS SCHUCKERTWERKE A.G. May 21, 1964 [May 25, 1963], No. 21123/64. Heading H1K. A plurality of silicon or germanium wafers 6 are supported and spaced from each other within a carrier, comprising a tube 2 provided with longitudinal slots 3, by means of filaments 5 which pass through pairs of slots 3 and rest on the underlying wafer. The lower end of tube 2 may contain a further tube or solid section to act as a base, or as in Fig. 2 (not shown) may be filled with a block 4 of semiconductor material, e.g. silicon. The wafers may be subjected to a diffusion or oxidization treatment or a stack of silicon wafers of alternate conductivity types may be subjected to a transport reaction comprising exposing them to an atmosphere of hydrogen containing silicon tetrachloride and providing a temperature gradient between the wafers so that semiconductor material is transferred from each wafer to the next through the gas phase. Tube 2 and filaments 5 may be of quartz for use in the above treatments but may be of acid resistant plastics material if the wafers are to be subjected to an etching process. The tube may be provided with a greater number of slots, especially if it is of non-circular cross-section, e.g. rectangular. |
