| 摘要 |
<p>1,037,335. Semi-conductor devices. SIEMENS & HALSKE A.G. April 6, 1964 [April 8, 1963], No. 14053/64. Heading H1K. In an encapsulated semi-conductor system the semi-conductor body 5 is mounted on a gilded plate 9 the material of which is substantially free of substances which would exert a doping effect on the body, the plate being mounted on a gilded electrical supply lead 2 which mechanically supports the system and being of a larger area than the area over which it is attached to the lead so that it dissipates heat generated in the system. The plate is made of molybdenum or of an alloy of iron, nickel and cobalt. The semi-conductor body is alloyed to the gilded plate, or to a metal coating which is itself alloyed to the plate at a temperature lower than the alloying temperature of the body with the coating. Alternatively, the body may be connected to the plate by a low-temperature solder. Emitter and base electrodes 11, 12 are attached to a mesa 10 and are connected to leads 3, 4 by gold wires 6, 7. The leads 2-4 are glass-fused into apertures in the encapsulation chassis plate or plinth 1 and are gilded with a gold layer substantially thinner than that deposited on the plate 9. The alloying of the semi-conductor body to the plate, and the connection of the wires 6, 7 by thermocompression to the leads 3, 4 and to the electrodes 11, 12 may be performed simultaneously with the aid of a hot stream of gas. A hollow cylindrical cap (not shown) encloses the system and is welded to the plinth 1.</p> |
