| 摘要 |
1,216,061. Transistor amplifiers. COMMISSARIAT A L'ENERGIE ATOMIQUE. 10 Jan., 1969 [10 Jan., 1968], No. 1592/69. Addition to 1,180,259. Heading H3T. [Also in Division G1] A unity gain impedance reducing amplifier comprises a symmetrical arrangement of insulated gate FETs 23, 24 and transistors 25, 26. The input is applied to the gate of FET 24 and the output is taken from the emitter of transistor 25. Negative feedback over potentiometer 27 is adjusted for optimum linearity. The amplifier is used to measure voltages or charges accumulated on capacitor 1 (see Division G1). |
