| 摘要 |
990,163. Crystal-pulling. TEXAS INSTRUMENTS Inc. April 10, 1961 [April 13, 1960], No. 12904/61. Heading BIS. A semi-conductor compound of a volatile element is pulled from a melt in the presence of the volatile element using a direct drive, pulling being effected in a chamber connected to a gas trap into which vapour from the chamber is allowed to leak. The compound may be InSb, InP, GaAs, A1P, PbTe, InSe, In 2 Te 3 , AgSbTe 2 , Bi 2 Te 3 , CuFeTe 2 , CuGaSe 2 , or CuFeSe 2 . The chamber may contain an inert gas, e.g. argon, which may escape with the vapour. As shown, a rod 6 is pulled from a melt 7 in a quartz chamber 2 using a quartz pull rod 4 which passes through a porous graphite bearing 11, a vapour trap bounded by a quartz tube 13 and cooled by a water jacket 17, and a teflon seal 16. Vapour may also escape between a cap 3 of boron nitride and the top of chamber 2 into a chamber 15 fed with inert gas. |
