| 摘要 |
1,130,718. Semi-conductor devices. SIEMENS A.G. 28 March, 1966 [30 March, 1966], No. 13501/66. Heading H1K. [Also in Division C7] An integrated circuit as shown in Fig. 3 is produced by epitaxially depositing a Si layer 14 on a spinel carrier 11, a transistor system 12 and a diode 13 being formed in the layer 14. A region 15 of opposite conductivity insulates the two systems from one another. A troughlike region 17 of opposite conductivity is produced by diffusion and this completes the diode section. In the transistor section a region 19 of opposite conductivity is diffused and a further emitter region 20 is diffused into region 19 of the same conductivity as basic material 18. All the zones are provided with non-blocking contact electrodes 21. The remainder of the surface is covered with a layer of silicon dioxide which serves as a carrier for conductive strips. |
