发明名称 THIN FILM RESISTOR OF RUTHENIUM OXIDE AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To obtain a uniform and continuous thin-film resistor having a proper resistance value by composing this thin-film resistor mainly of Ru, O and an element which forms an oxide of rutile type structure. CONSTITUTION:A thin-film resistor is composed of Ru, O and an element which forms an oxide of rutile type structure. Then, a PVD method or a MOD method, in which a thin film is formed by coating an organic metal, followed by calcining, is used.</p>
申请公布号 JPH043901(A) 申请公布日期 1992.01.08
申请号 JP19900106182 申请日期 1990.04.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAITO SHINJI;KURAMASU KEIZABURO;CHIBA MASAFUMI;OKANO KAZUYUKI;HAYASHI CHIHARU;TAKAHASHI YASUTAKA;NAGATA SOJI
分类号 H01C17/06;H01C7/00;(IPC1-7):H01C17/06 主分类号 H01C17/06
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