| 摘要 |
Process comprises using a dopant source the same III-V semiconductor as that grown epitaxially, which is also paint-defect-doped, but to a higher concentration. The dopant source is placed in a tubular quartz apparatus between a source of the corresponding material, and the substrate, on which the doped epitaxial layer is to be grown. A transport-gas is passed through the apparatus in the direction from the material source to the substrate, which are kept at con stant, though different temperatures, whereas the temperature of the dopant source is independently adjustable, depending on the required doping concentration.
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