| 摘要 |
The invention relates to a semiconductor device having a substrate of the one conductivity type on which an epitaxial layer divided into islands of the opposite conductivity type is provided and in which at least one island comprises a lateral transistor and a buried layer of the opposite conductivity type. In order to obtain both a small vertical emitter injection and a high collector-base breakdown voltage, the emitter zone has a larger thickness than the collector zone and, in contrast with the collector zone, the emitter zone reaches up to the buried layer. No additional manufacturing step is necessary for the manufacture. |
