| 摘要 |
1,253,645. Semi-conductor connections. SIEMENS A.G. 2 March, 1970 [3 March, 1969], No. 9856/70. Heading H1K. Planar semi-conductor components are provided with insulated aluminium conductors as connecting tracks and leads and as contact pads, by depositing a layer 2 of aluminium on the semi-conductor 1 by vacuum thermal evaporation from wire, forming an oxide layer 3 on the aluminium by anodic oxidation with hot dilute oxalic acid electrotype and a graphite cathode, or by hot alkaline chromate, and similarly depositing thereon a further aluminium layer 4 which is oxide coated at 16; after which further alternate aluminium and oxide coats may be deposited. Electrical contact to the layer may be effected over a bead of solder (not shown) alloyed into the semi-conductor in HCl atmosphere, to which a thin aluminium wire is attached. The limits of oxidation are set by a layer of photoresist. A region of the aluminium layer may be masked by photoresist during oxidation, and thereafter a further aluminium layer deposited to contact the first layer in the area of the photoresist masking (Figs. 2, 3, not shown), and the further layer may be divided into a complex conductor structure by further photo-etching. The conducting tracks may be insulated by a further intermediate layer of SiO 2 deposited on the aluminium oxide by cathode evaporation or silane pyrolysis, or of Si 3 N 4 by cathode evaporation (Fig. 4, not shown). |
