| 摘要 |
<p>PURPOSE:To obtain a thin film transistor for liquid crystal display element having excellent stability of transistor characteristics by forming an amorphous silicon film provided on a region including a region directly above a gate elec trode, and an at least borosilicate film on the silicon film between source and drain electrodes. CONSTITUTION:A gate electrode 2 and a glass board 1 are covered with a gate oxide film 3, a amukdoped amorphous silicon film 4 and an N<+> type amor phous silicon film 5 are laminated, selectively removed except the part directly above the electrode 2 and the periphery, and a display electrode 6 is selectively formed on the layer 3 of the region except the vicinity of the electrode 2. It is covered with a Cr film 7 and an Al film 8, selectively removed by etching, a pair of source.drain electrodes to be connected at one side to the electrode 6 are formed, the film 5 between the source and drain electrodes is removed, and source.drain regions are formed. Further, the electrode 2 and the source.drain electrodes are covered with borosilicate film 10.</p> |
