发明名称 Metallisation of semiconductor surface - using metal soln/suspension
摘要 Surface of electrical element, esp. Si planar semiconductor element, is metallised by applying liquid soln. or suspension contg. metal to surface to be metallised, evaporating liquid and converting residual metal cpd. to pure metal by heating, then sintering or alloying with semiconductor surface. Metal coating adheres well and hence can be used as contact. Process is economical and does not require great expenditure on apparatus.
申请公布号 DE1963514(A1) 申请公布日期 1971.06.24
申请号 DE19691963514 申请日期 1969.12.18
申请人 SIEMENS AG 发明人 PAMMER,ERICH,DIPL.-CHEM.DR.
分类号 G03F7/004;H01L21/00;H01L23/29;H01L23/482 主分类号 G03F7/004
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