发明名称 |
Metallisation of semiconductor surface - using metal soln/suspension |
摘要 |
Surface of electrical element, esp. Si planar semiconductor element, is metallised by applying liquid soln. or suspension contg. metal to surface to be metallised, evaporating liquid and converting residual metal cpd. to pure metal by heating, then sintering or alloying with semiconductor surface. Metal coating adheres well and hence can be used as contact. Process is economical and does not require great expenditure on apparatus. |
申请公布号 |
DE1963514(A1) |
申请公布日期 |
1971.06.24 |
申请号 |
DE19691963514 |
申请日期 |
1969.12.18 |
申请人 |
SIEMENS AG |
发明人 |
PAMMER,ERICH,DIPL.-CHEM.DR. |
分类号 |
G03F7/004;H01L21/00;H01L23/29;H01L23/482 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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