| 摘要 |
1,179,876. Resistors; integrated circuits. R. C. A. CORPORATION. 3 April, 1967 [13 April, 1966], No. 15100/67. Headings H1K and H1S. A resistor comprises a single crystal of semiconductor material, e.g. silicon, the surface layer of which is of one type conductivity, a first region 12<SP>1</SP> of opposite type conductivity and spaced contacts 18, and a second region 16 of said one type conductivity partially within the first region but extending only partially through the thickness of the first region. For use in integrated circuits, a crystal of silicon 2 is provided with N + and N type layers 4 and 6. P type impurity is diffused into the floating portion 8 of layer 6 to a depth of approximately 2.4 microns. Following this, another N+ type layer 16 is diffused into this P + type layer such that a narrow band 12<SP>1</SP> of the P+ type layer forms the effective resistance element between evaporated metal terminals 18. Examples described use boron from decomposition of boron tri-bromide for the P+ type layer and phosphorus from the decomposition of phosphorus oxy-chloride for the N + type layer. Transistors may be made simultaneously. |
