| 摘要 |
<p>Epitaxial or polycrystalline layers of cpds. of group IIIb and Vb elements are prepd. by introducing a hydride of a group (IIIb) element into a reaction tube with the aid of a carrier gas consisting of H2 and/or inert gas, simultaneously introducing into the reaction tube a group Vb element or one of its cpds. with the aid of a carrier gas consisting of H2 and/or inert gas, and reacting the components in the gas phase in the reaction tube. Used for prodn. of semiconducting layers of GaAs and similar materials. The reaction is simple, and undesired reactions e.g. etching or reaction with the reactor tube, do not occur.</p> |
