METHOD FOR MAKING SEMICONDUCTOR DEVICES

摘要

A method is provided for making a PN-junction semiconductor. A crystalline semiconductor wafer having a metal dot placed upwardly thereon is heated to cause the dot to adhere to the wafer. The wafer is then turned upside down at room temperature. The wafer is then heated at a temperature higher than the adhering temperature to cause the dot to interact with the wafer to form a hyperabrupt junction silicon diode.