| 摘要 |
<p>PURPOSE:To relax the step difference and to improve the uniformity by forming a conductive layer by a laminated structure of thin films of two layers or more, and making material and/or patterns of the layer which becomes a conductive wiring and the layer which is reformed and becomes an insulating film different. CONSTITUTION:On a semiconductor substrate 10, the lower layer electrode layer 20 is formed by a regular semiconductor process, and subsequently, a wiring reformed layer 21 is formed by the same process. This wiring reformed layer 21 also consists of the same Al material as that of the lower layer electrode layer 20, a terminal part 22 on which the lower electrode layer 20 and the wiring reformed layer 21 are laminated is set as an anode chemical conversion electrode terminal and a chemical conversion treatment is performed, and the wiring reformed layer 21 is reformed to a reformed layer 23 of Al2O3. In such a way, a step difference is reduced, and uniformity of a surface reformed layer of a conductive layer can be made satisfactory.</p> |
