| 摘要 |
PURPOSE:To avoid oxidization of a stem and others, by locally heating each connection by means of bundled heating lines, when various electrodes of semiconductor elements are connected to the corresponding connecting parts directly or by means of fine metal wires. CONSTITUTION:The sides and the bottom of heater block 2, which contain heater 3 and in which nitrogen outlets 4 and 5 are provided, are surrounded by heat insulating plate 6, and thereby heating device 1 is constructed. Semiconductor element 13 is mounted on die bonding unit 11 in a depression on the surface of this heating device 1. In its neighborhood, stem 7, which is provided with wire bonding unit 12, is placed. This is irradiated by infrared rays from infrared ray heating device 8, which is provided with an infrared ray lamp on the focus of reflector mirror 10. At this time, the stem is heated to 100-150 deg.C by device 1, and die bonding unit 11 and wire bonding unit 12 only are locally connected at 320-400 deg.C. By this, since parts other than these are at low temperature, it is not necessary to use metal plating here. |
