| 摘要 |
<p>PURPOSE:To rapidly delete residual charge on an electrostatic chuck by electrostatically attracting a semiconductor wafer, processing it, then supplying inert gas, and discharging it. CONSTITUTION:When a semiconductor wafer 9 is placed on an electrostatic chuck 4, a positive DC power source 7 is connected to an electrostatic electrode 5 in the chuck 4 through a coil 6 to apply a DC voltage thereto, the wafer 9 is attracted fixedly to the chuck 4. After the attracted wafer 9 is processed as predetermined in a chamber 1, a negative DC power source 8 is connected to the electrode in the chuck 4 through the coil 6, and the wafer 5 is separated from the chuck 4. In this case, since residual charge exists on the chuck 4, argon gas 10 is supplied from a gas supply port 1a of the vacuum chamber 1, and a pair of electrodes 2a and 2b are discharged therebetween by a high frequency power source 3, the gas 10 becomes a plasma state, and the charge on the chuck 4 is eliminated. Thus, the residual charge can be rapidly eliminated, and the wafer can be continuously processed.</p> |
