| 摘要 |
PURPOSE:To reduce the dispersion in a drain current of a 1st FET and to obtain a quick switching response by connecting a source of a 1st FET to ground via a capacitor and connecting to a drain of a 2nd FET through which a prescribed drain current flows. CONSTITUTION:A gate of a FET 1 in terms of DC is connected to an external gate bias voltage source 22 via microwave lines 43,44, a resistor 45 and a gate bias terminal 21 and its drain is connected to an external gate bias voltage source 10 via a drain bias terminal 8, then a drain current equal to drain current of FETs 12,13 connected to its source flows to the FET 1. Gates of the FETs 12,13 is connected to an external gate bias voltage source 23 via a gate bias terminal 6 and their sources are connected to ground, then a prescribed drain current flows to the FETs 12,13. |
